PH5330E,115 datasheet

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• Маркировка
  PH5330E,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PH5330E,115 Current - Continuous Drain (id) @ 25?° C: 80A Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 21nC @ 5V Input Capacitance (ciss) @ Vds: 2010pF @ 10V Mounting Type: Surface Mount Package / Case: LFPak-4 Power - Max: 62.5W Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V Series: TrenchMOS?„? Vgs(th) (max) @ Id: 2.5V @ 1mA Product Category: MOSFET RoHS: yes Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 20 V Continuous Drain Current: 80 A Resistance Drain-Source RDS (on): 0.0057 Ohms Configuration: Single Triple Source Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Fall Time: 13 ns Minimum Operating Temperature: - 55 C Power Dissipation: 62.5 W Rise Time: 22 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 56 ns Part # Aliases: PH5330E T/R Other Names: 568-2348-2, 934057824115, PH5330E T/R
• Количество страниц
  12 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  204,68 KB

PH5330E,115 datasheet скачать

PH5330E,115 datasheet